Stability and molecular pathways to the formation of spin defects in silicon carbide

Autor: Elizabeth M. Y. Lee, Alvin Yu, Juan J. de Pablo, Giulia Galli
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Druh dokumentu: article
ISSN: 2041-1723
DOI: 10.1038/s41467-021-26419-0
Popis: Understanding the mechanism of formation of solid-state spin defects underpins their future applications in quantum technologies. Here, the authors use a combination of ab initio molecular dynamics, enhanced sampling, and density functional theory to clarify the formation process of spin defects in silicon carbide.
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