| Autor: |
Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 12, Pp 651-657 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2024.3447149 |
| Popis: |
In this two-part article we discuss the difference between a continuous and a discrete approach to trap modeling in the simulation of 3-D NAND Flash memories with polysilicon channel. In Part I we focus on threshold voltage $({\mathrm { V}}_{\mathrm { T}})$ fluctuations induced by traps and show that lower values for the average and rms ${\mathrm { V}}_{\mathrm { T}}$ arise when the discrete nature of traps is accounted for. We explain such differences in terms of a stronger percolation that leads to a lower number of filled traps in the discrete-trap case, and investigate such differences as a function of cell parameters and temperature. Finally, we compare the two approaches showing that a continuous trap model cannot reproduce the correct dependences resulting from a discrete treatment. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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