PaperThe Impact of ExternallyApplied Mechanical Stress on Analogand RF Performances of SOI MOSFETs

Autor:	Mostafa Emam, Samer Houri, Danielle Vanhoenacker-Janvier, Jean-Pierre Raskin
Jazyk:	angličtina
Rok vydání:	2023
Předmět:	cutoff frequency fT intrinsic gain mechanical stress piezoresistance coefficiet SOI MOSFET Telecommunication TK5101-6720 Information technology T58.5-58.64
Zdroj:	Journal of Telecommunications and Information Technology, Iss 4 (2023)
Druh dokumentu:	article
ISSN:	1509-4553 1899-8852
DOI:	10.26636/jtit.2009.4.957
Popis:	his paper presents a complete study of the impactof mechanical stress on the performance of SOI MOSFETs.This investigation includes dc, analog and RF characteristics.Parameters of a small-signal equivalent circuit are also ex-tracted as a function of applied mechanical stress. Piezore-sistance coefficient is shown to be a key element in describingthe enhancement in the characteristics of the device due tomechanical stress.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/b790bd925fd043c494606b102a0bb4eb Zobrazit plný text záznamu View record in DOAJ