| Autor: |
Ravikant, Charanjeet Singh, Anjali Panchwanee, Rajib K. Rakshit, Manju Singh, V. R. Reddy, Ram Janay Choudhary, V. N. Ojha, Ashok Kumar |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 10, Iss 7, Pp 075206-075206-6 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0006353 |
| Popis: |
We report the growth and polarization switching properties of epitaxial ferroelectric–superconducting heterostructure PbZr0.52Ti0.48O3 (PZT) (100 nm)/YBa2Cu3O7−δ (YBCO) (100 nm) thin films for non-volatile ferroelectric random access memory elements. The epitaxial nature of the heterostructure is verified using the reciprocal space mapping data with the superconducting phase transition temperature (Tc) of nearly 25 K far below the Tc of as-grown YBCO under the same condition. The significant remanent polarization (Pr) ∼ 45 µC/cm2 at 1 kHz can switch from one state to another using 1 μs pulse. The devices meet the basic criteria of memory elements, such as high resistance ∼10 GΩ at 8 V, a butterfly-like capacitance–voltage (C/V) loop, significant polarization, a sharp change in the displacement current, long-time charge retention, and small fatigue at room temperature. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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