Richardson-Schottky transport mechanism in ZnS nanoparticles

Autor: Hassan Ali, Usman Khan, M. A. Rafiq, Attia Falak, Adeela Narain, Tang Jing, Xiulai Xu
Jazyk: angličtina
Rok vydání: 2016
Předmět:
Zdroj: AIP Advances, Vol 6, Iss 5, Pp 055306-055306-7 (2016)
Druh dokumentu: article
ISSN: 2158-3226
DOI: 10.1063/1.4948982
Popis: We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ranging from 300 K to 400 K. High frequency dielectric constant has been used to obtain the theoretical values of Richardson-Schottky and Poole-Frenkel barrier lowering coefficients. Experimental value of the barrier lowering coefficient has been calculated from conductance-voltage characteristics. The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing Richardson-Schottky emission has been responsible for conduction in ZnS nanoparticles for the temperature range studied.
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