| Autor: |
V. I. Levchenko, L. I. Postnova, E. L. Trukhanava, V. P. Bondarenko |
| Jazyk: |
ruština |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 6, Pp 100-102 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
1729-7648 |
| Popis: |
ZnSe epitaxial films are grown on (111)- and (100)-oriented Si substrates with a porous buffer layer by the thermal evaporation of ZnSe compound. The crystal structure of the deposited films was controlled by X-ray diffraction. The morphology of the films was studied by high-resolution scanning electron microscopy. It was demonstrated the porous buffer layer provides improving the quality of the films compared with films deposited on the monolithic silicon. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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