| Autor: |
Mitsuru Sometani, Yusuke Nishiya, Ren Kondo, Rei Inohana, Hongyu Zeng, Hirohisa Hirai, Dai Okamoto, Yu-ichiro Matsushita, Takahide Umeda |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
APL Materials, Vol 11, Iss 11, Pp 111119-111119-5 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2166-532X |
| DOI: |
10.1063/5.0171143 |
| Popis: |
The electric properties of the carbon dangling-bond (PbC) center at a thermally oxidized 4H-SiC(0001)/SiO2 interface are investigated. We experimentally and theoretically determine the energy levels of the associated interface states to estimate the impacts of the PbC center on power device operations. By combining electrically detected magnetic resonance spectroscopy and capacitance–voltage measurements, the two PbC electronic levels [(0/−) and (+/0)] are determined as ∼1.2 and 0.6 eV from the valence band maximum, respectively. The effective correlation energy of the PbC center is 0.6 eV, which is 1.5 times larger than that of the silicon dangling-bond (Pb) center at Si/SiO2 interfaces. Our first-principles calculations confirm that the electronic levels of PbC are similar to experimental values. Considering these energy levels, the PbC center must impact both p- and n-channel devices, which is closely related to previously reported channel features. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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