| Autor: |
TANG Da-xiu, LIU Jin-yun, WANG Yu-xin, SHANG Jie, LIU Gang, LIU Yi-wei, ZHANG Hui, CHEN Qing-ming, LIU Xiang, LI Run-wei |
| Jazyk: |
čínština |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
Cailiao gongcheng, Vol 48, Iss 7, Pp 81-92 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
1001-4381 |
| DOI: |
10.11868/j.issn.1001-4381.2018.001298 |
| Popis: |
The basic structure, working principle, and the development process and research status of resistive random access memory (RRAM) were outlined. Material systems, including dielectric materials, electrode materials, and substrate materials, as well as broad trends and recent researches of flexible RRAM were summarized; the performance characteristics of flexible RRAM, including storage performance and mechanics performance, were analyzed. The significance and challenge of developing flexible RRAM were explicated. Problems existing in this area and possible approaches to the problems were also put forward. It was concluded that the highly conductive stretchable electrode and the steadily stored stretchable dielectric are primary direction in the future. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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