The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor

Autor: L. Magafas, N. Georgoulas, A. Thanailakis
Jazyk: angličtina
Rok vydání: 1998
Předmět:
Zdroj: Active and Passive Electronic Components, Vol 20, Iss 4, Pp 225-234 (1998)
Druh dokumentu: article
ISSN: 0882-7516
1563-5031
DOI: 10.1155/1998/71503
Popis: The a-SiC/c-Si(n) isotype heterojunction has been studied as a temperature sensor by measuring its reverse current-voltage (IR−V) and reverse voltage-temperature (V-T) characteristics, as well as its reverse current temperature dependence. The IR−V characteristics exhibit an almost constant current, whereas the reverse current IR depends strongly on T (from 230 K up to 320K). The V-T characteristics, at different reverse currents, reveal a highly temperature sensitive behavior for the a-SiC/c-Si(n) junction. The measured values of temperature sensitivity (Δ V/ΔT)max was found to be (≅−2.5 V/K) in the moderate temperature range, which are much higher than those obtained with bulk semiconductor temperature sensors. The high sensitivity-temperature- range of the a-SiC/c-Si(n) heterojunctions can be controlled electrically within the regim of values from 230 K up to 320 K. Finally, the high sensitivity of these devices, in conjunction with the fact that a-SiC films can be used as an add-on to the existing Si technology, emerge new possibilities to the fabrication of high sensitivity temperature microsensors.
Databáze: Directory of Open Access Journals
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