| Autor: |
E. A. Plis, S. S. Krishna, N. Gautam, S. Myers, S. Krishna |
| Jazyk: |
angličtina |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
IEEE Photonics Journal, Vol 3, Iss 2, Pp 234-240 (2011) |
| Druh dokumentu: |
article |
| ISSN: |
1943-0655 |
| DOI: |
10.1109/JPHOT.2011.2125949 |
| Popis: |
We report on a dual-band [mid/long-wave infrared (MWIR and LWIR)] InAs/GaSb strained layer superlattice detector with a pBp architecture. Fifty percent cutoff wavelengths of 5 and 9 μm were obtained with diffusion-limited behavior for midwave IR absorber. At 77 K, the peak D* values were equal to 5 × 1011 Jones (Vb = +0.1 V, λ = 5 μm) and 2.6 × 1010 Jones (Vb = -0.4 V, λ = 9 μm). The corresponding values of responsivity and quantum efficiency were 1.6 A/W and 39% (MWIR) and 1.3 A/W and 17% (LWIR). |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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