Properties of original and irradiated phosphide-gallium LEDs

Autor:	M. Ye. Chumak, P. G. Lytovchenko, I. V. Petrenko, D. P. Stratilat, V. P. Tartachnyk
Jazyk:	English<br />Russian<br />Ukrainian
Rok vydání:	2024
Předmět:	gap light emitting diodes irradiation spectral characteristics current-voltage characteristics electroluminescent characteristics. Atomic physics. Constitution and properties of matter QC170-197
Zdroj:	Âderna Fìzika ta Energetika, Vol 25, Iss 2, Pp 134-140 (2024)
Druh dokumentu:	article
ISSN:	1818-331X 2074-0565
DOI:	10.15407/jnpae2024.02.134
Popis:	Spectral features of the original and irradiated with electrons with E = 2 MeV GaP light emitting diodes (LEDs) were studied. Recombination lines of the exciton bound on the N isoelectronic center and on the pair complexes NN1 were detected. The change in the spectral composition of radiation when passing through a section of negative differential resistance is analyzed. Dose dependences of luminescence intensity were obtained for green GaP(N) and red GaP(Zn-O) LEDs. The maximum critical radiation dose was established, after which the LEDs lost their characteristic exciton emission mechanism. The results of the annealing of irradiated LEDs are given.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/cb3a14f1cc0845e9a664dd7c40ec1c9f Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF