| Autor: |
Yutaro Miyano, Ryosuke Asafuji, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 5, Iss 12, Pp 127116-127116-6 (2015) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4938126 |
| Popis: |
We investigated the effect of thermal oxidation on crystalline faults in 4H-SiC epilayers using photoluminescence imaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation. We also found that line-shaped faults perpendicular to the off-cut direction were formed during oxidation and were stretched and increased with the oxidation time. Since these line-shaped faults were peculiar to the oxidation and stretched/increased with the oxide growth, they were identified as oxidation-induced stacking faults as seen in Si oxidation. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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