Study on Cauer Thermal Network Model Considering Bidirectional Heat Transfer

Autor: Qi Li, Shi Cheng, Yonghe Chen, Jian Ye, Xianwen Cui, Pei Li
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: IEEE Access, Vol 12, Pp 90525-90534 (2024)
Druh dokumentu: article
ISSN: 2169-3536
DOI: 10.1109/ACCESS.2024.3419921
Popis: Wide-band gap semiconductor devices based on GaN materials, such as high electron mobility transistors (HEMT), are gradually replacing traditional Si devices in industrial applications owing to their excellent electrothermal properties. Nonetheless, reliability concerns and accurate junction temperature estimation remain critical in the deployment of these devices. This paper proposes an enhanced Cauer thermal network model accounting for bidirectional heat transfer. The improved model takes into account the path from the junction via the top case to the ambient. Additionally, it utilizes the top case temperature rise to identify thermal parameters and establishes the relationship between the top case temperature time constant and the Cauer model’s thermal parameters. This method eliminates the need for measuring power losses or invasively modifying the original devices, nor does it require detailed structural and material parameters of the packaged device. The feasibility and reliability of the obtained thermal network parameters are verified through simulation and validated through experimentation.
Databáze: Directory of Open Access Journals