| Autor: |
Wonsik Kim, Won‐June Lee, Taehyun Kwak, Seokhyeon Baek, Seung‐Hoon Lee, Sungjun Park |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Advanced Materials Interfaces, Vol 9, Iss 10, Pp n/a-n/a (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2196-7350 |
| DOI: |
10.1002/admi.202200032 |
| Popis: |
Abstract Sol–gel indium–gallium–zinc oxide (IGZO) semiconductors are developed as active components of thin‐film transistors (TFTs) because of their high electron mobility, cost‐effective large‐area fabrication, and applicability for flexible substrates. Controlling oxygen vacancies (Vo) in the IGZO semiconductor channel is always problematic for reliable and long‐term operation. Surplus interfacial charges inside the IGZO channel cause negative shifts in threshold voltages (Vth), resulting in depletion‐mode operation and involuntary high current output. The room temperature and rapid ( |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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