Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide

Autor: Jidong Jin, Xiaoyu Lin, Jiawei Zhang, Jeongho Lee, Zhenyuan Xiao, Soobin Lee, Jaekyun Kim
Jazyk: angličtina
Rok vydání: 2023
Předmět:
Zdroj: Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)
Druh dokumentu: article
ISSN: 2199-160X
20220111
DOI: 10.1002/aelm.202201117
Popis: Abstract Oxide semiconductor thin‐film transistors (TFTs) with low‐voltage operation, excellent device performance, and bias stability are highly desirable for portable and wearable electronics. Here, the development of low‐voltage indium‐tin‐zinc‐oxide (ITZO) TFTs with excellent device performance and bias stability based on a dual‐channel layer and an anodic‐oxide dielectric layer are reported. An ultra‐thin anodic AlxOy film as a gate dielectric layer is prepared using an anodization process. The dual‐channel layer consists of an oxygen‐uncompensated channel layer and an oxygen‐compensated capping layer. It is confirmed that the dual‐channel structure is effective for enhancing device performance and bias stability in comparison with the single‐channel structure. As a result, the dual‐channel ITZO TFT gated with anodic AlxOy exhibits an effective saturation mobility of 12.56 cm2 Vs−1, a threshold voltage of 0.28 V, a subthreshold swing of 76 mV dec−1, a low‐voltage operation of 1 V, and good operational stability (threshold voltage shift (ΔVTH)
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