| Autor: |
Michihiko Yamanouchi, Tatsuro Oyamada, Hiromichi Ohta |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 9, Iss 3, Pp 035129-035129-4 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5079898 |
| Popis: |
We have investigated the planar Hall effect (PHE) and the anisotropic magnetoresistance (AMR) in La0.67Sr0.33MnO3/LaAlO3/SrTiO3 (LSMO/LAO/STO) and LSMO/STO structures, where the LSMO (LAO) thickness was 13 unit cells (u.c.) and 18 u.c. (8 u.c. and 6 u.c.). The LAO/STO structures under the LSMO layers are conductive, which is consistent with the formation of a two-dimensional electron system (2DES) at the LAO/STO interface. The magnetotransport measurements show that the sign of the PHE coefficient for the LSMO/LAO/STO structures is opposite to that for the LSMO/STO structures, whereas the AMR coefficient, which is generally correlated with the PHE coefficient, is negative for both structures at temperatures below ∼175 K. The LAO/STO structures show no apparent PHE or AMR, and the coefficients obtained thus originate from the LSMO. These results suggest that the 2DES and/or the LSMO/LAO interface affect the PHE in the LSMO layer. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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