| Autor: |
Cheng-Wei Liu, Jin-Ji Dai, Ssu-Kuan Wu, Nhu-Quynh Diep, Sa-Hoang Huynh, Thi-Thu Mai, Hua-Chiang Wen, Chi-Tsu Yuan, Wu-Ching Chou, Ji-Lin Shen, Huy-Hoang Luc |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2045-2322 |
| DOI: |
10.1038/s41598-020-69946-4 |
| Popis: |
Abstract Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of nucleated GaSe layers grown on hexagonal GaN/Sapphire and Mica substrates, whereas single-orientation GaSe domain is predominant in the GaSe/GaAs (001) sample. Strong red-shifts in the frequency of in-plane $${E}_{2g}^{2}$$ E2g2 vibration modes and bound exciton emissions observed from Raman scattering and photoluminescence spectra in all samples are attributed to the unintentionally biaxial in-plane tensile strains, induced by the dissimilarity of symmetrical surface structure between the 2D-GaSe layers and the substrates during the epitaxial growth. The results in this study provide an important understanding of the MBE-growth process of 2D-GaSe on 2D/3D hybrid-heterostructures and pave the way in strain engineering and optical manipulation of 2D layered GaSe materials for novel optoelectronic integrated technologies. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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