| Autor: |
Wenyang Zhang, Li Lu, Chenfei Li, Weijie Jiang, Wenzhao Wang, Xingqiang Liu, Ablat Abliz, Da Wan |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 12, Pp 502-507 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2024.3424545 |
| Popis: |
Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment exhibit superior bias stress stability and a threshold voltages ( $V_{\mathrm {th}}$ ) closer to 0 V with almost no decline in mobility. In particular, the positive/negative bias stress threshold shift of N-doped a-IGTO TFTs is substantially reduced in both dark and light environment. The X-ray photoelectron spectroscopy analysis (XPS) and low frequency noise (LFN) are employed to study the mechanism of N-doping in a-IGTO TFTs. The XPS results indicate that appropriate amount of N-doping could enhance the bias stress stability and control the $V_{\mathrm {th}}$ efficiently by passivating the defects such as oxygen vacancy in a-IGTO films. The LFN results illustrate that the average interfacial trap density could be reduced by N-doping. Overall, the strategy presented here is effective for preparing a-IGTO TFTs with enhanced stability for potential applications in future optoelectronic displays. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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