| Autor: |
Siva Pratap Reddy Mallem, Peddathimula Puneetha, Dong-Yeon Lee, Yoonkap Kim, Han-Jung Kim, Ki-Sik Im, Sung-Jin An |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Nanomaterials, Vol 13, Iss 14, p 2132 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2079-4991 |
| DOI: |
10.3390/nano13142132 |
| Popis: |
We used capacitance–voltage (C–V), conductance–voltage (G–V), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is increased, the predicted surface trap density promptly drops, with values ranging from 9.1 × 1013 eV−1∙cm−2 at 1 kHz to 1.2 × 1011 eV−1∙cm−2 at 1 MHz. The power spectral density exhibits 1/f-noise behavior in the barrier accumulation area and rises with gate bias, according to the 1/f-noise features. At lower frequencies, the device exhibits 1/f-noise behavior, while beyond 1 kHz, it exhibits 1/f2-noise behavior. Additionally, when the fabricated device governs in the deep-subthreshold regime, the cutoff frequency for the 1/f2-noise features moves to the subordinated frequency (~102 Hz) side. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
