| Autor: |
Kazunari Kurita, Takeshi Kadono, Ryosuke Okuyama, Ayumi Onaka-Masada, Satoshi Shigematsu, Ryo Hirose, Koji Kobayashi, Akihiro Suzuki, Hidehiko Okuda, Yoshihiro Koga |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 10, Pp 720-727 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2021.3135656 |
| Popis: |
We have developed silicon epitaxial wafers with high gettering capability using hydrocarbon molecular ion implantation for advanced Complementary Metal-Oxide-Semiconductor (CMOS) image sensors. These wafers have three unique silicon wafer characteristics for improvement of CMOS device electrical parameter such as high metallic impurity gettering, oxygen out-diffusion barrier effects from Czochralski silicon (CZ) substrate and hydrogen passivation effect for interface state defect at Si/SiO2. We demonstrate that double epitaxial growth silicon wafers have an extremely high gettering capability during CMOS device fabrication process. We also found that gettering capability strongly dependence on oxygen impurity amount in hydrocarbon molecular ion implantation projection range. We believe that this novel silicon wafer can drastically contribute to the improvement of CMOS image sensor device performance such as white spot defect and dark current. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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