Study the Effect of Improving the Transport Proprieties of Substrate Material in InAlAs/InGaAs/InP HEMT on Drain Current and Cut-Off Frequency of the Device
| Autor: | DERROUICHE Soufiane |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Journal of Electrical and Electronics Engineering, Vol 13, Iss 2, Pp 51-56 (2020) |
| Druh dokumentu: | article |
| ISSN: | 1844-6035 2067-2128 |
| Popis: | In this paper, I present the effect of improving the electronic transport properties in the substrate on the performances of the considered High Electron Mobility Transistor HEMT. The decrease of substrate structural energies leads to improving the electronic transport proprieties in the material such as the drift velocity. On the other hand, the charge carriers will be influenced even by the low values of the applied field. The device which is characterized by low substrate structural energies showed better results than that based on InAlAs/InGaAs/InP in terms of drain current and cut-off frequency due to the increase of applied electric field effect on charge carriers existing in substrate level. The increase of applied electric field effect on substrate leads to increasing the holes concentration transferred towards the source region and which in turn the decrease of source resistance that leads to increases in the drain current and cut-off frequency. The decrease of substrate structural energies induces the increase of device transconductance. |
| Databáze: | Directory of Open Access Journals |
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