| Autor: |
Mengyang Zhong, Huan Li, Daibing Zhou, Kun Yang, Fei Guo, Dan Lu, Lingjuan Zhao, Song Liang |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
IEEE Photonics Journal, Vol 16, Iss 5, Pp 1-5 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
1943-0655 |
| DOI: |
10.1109/JPHOT.2024.3406064 |
| Popis: |
We report the fabrication of a first electro-absorption modulated widely tunable DBR lasers (TEML) based on InGaAlAs multi-quantum well (MQW) material, which is superior than InGaAsP MQWs for the fabrication of both modulators and lasers. The device is fabricated by using butt-joint material growth technology and operates at a wavelength of 1.5 μm. An over 12 nm wavelength tuning range can be obtained. The characteristic temperature of the device is 83 K, which is notably higher than that for a laser based on InGaAsP MQWs. At 25°, the electro-absorption modulator (EAM) of the device has a small signal modulation bandwidth exceeding 27 GHz, which is notably higher than the bandwidth for a TEML device having the same structure but InGaAsP MQW active material. At 25 Gb/s NRZ data modulation, to achieve 10E-10 bit error rate (BER), the power penalty after 5 and 10 km fiber transmission are 1 and 3 dB, respectively. The device is a promising low-cost light source for future high-capacity wavelength division multiplexing (WDM) optical communication systems. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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