| Autor: |
Daisuke Iida, Pavel Kirilenko, Martin Velazquez-Rizo, Zhe Zhuang, Mohammed A. Najmi, Kazuhiro Ohkawa |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 12, Iss 6, Pp 065125-065125-6 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0097761 |
| Popis: |
Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. An InGaN single quantum well active layer provides the red spectral emission. The 621-nm-wavelength LEDs exhibited high-purity emission with a narrow full-width at half-maximum of 51 nm. The packaged LED’s external quantum efficiency, light-output power, and forward voltage with a 621 nm peak emission wavelength at 20 mA (10.1 A/cm2) injection current were 4.3%, 1.7 mW, and 2.96 V, respectively. This design development represents a valuable contribution to the next generation of micro-LED displays. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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