| Autor: |
SLAWOMIR GULKOWSKI |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
TASK Quarterly, Vol 19, Iss 1 (2015) |
| Druh dokumentu: |
article |
| ISSN: |
1428-6394 |
| DOI: |
10.17466/TQ2015/19.1/E |
| Popis: |
Due to the possibility of producing high quality and low cost silicon substrates the Epitaxial Lateral Overgrowth technology may find its application in the photovoltaic industry. However, a lateral growth process depends on many technological parameters such as the temperature of the system, the cooling rate, the solvent or the geometry of the mask. For this reason finding optimized settings for these factors in experimental research is difficult and time consuming. Numerical analysis of the growth process leads to better understanding of the fundamentals of the growth process. For this reason a computational model of epitaxial growth was proposed. This paper focuses on the accuracy of the numerical solution of the mass transport process during epitaxial growth. The method was implemented in the Matlab environment for the moving boundary application. The results of the calculations are presented. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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