| Autor: |
Alexandre Heintz, Bouraoui Ilahi, Alexandre Pofelski, Gianluigi Botton, Gilles Patriarche, Andrea Barzaghi, Simon Fafard, Richard Arès, Giovanni Isella, Abderraouf Boucherif |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2041-1723 |
| DOI: |
10.1038/s41467-022-34288-4 |
| Popis: |
Many complex devices rely on epitaxial growth with high crystallinity and accurate composition. Here authors report epitaxial growth of Ge on deep etched porous Si pillars to provide a fully compliant substrate enabling elastic relaxation of defect free Ge microcrystals. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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