Autor: |
Zhongliang Qiao, Xiang Li, Jia Xubrian Sia, Wanjun Wang, Hong Wang, Lin Li, Zaijin Li, Zhibin Zhao, Yi Qu, Xin Gao, Baoxue Bo, Chongyang Liu |
Jazyk: |
angličtina |
Rok vydání: |
2021 |
Předmět: |
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Zdroj: |
IEEE Access, Vol 9, Pp 16608-16614 (2021) |
Druh dokumentu: |
article |
ISSN: |
2169-3536 |
DOI: |
10.1109/ACCESS.2021.3051179 |
Popis: |
A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06 μm is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at ~9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at ~38.04 GHz is observed. The characteristic temperature (T0) of the laser and the influences of absorber bias voltage on T0 have been systematically investigated. From our findings, T0 shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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