Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
Autor: | Walid Amir, Ju‑Won Shin, Ki‑Yong Shin, Jae‑Moo Kim, Chu‑Young Cho, Kyung‑Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae‑Woo Kim |
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Jazyk: | angličtina |
Rok vydání: | 2021 |
Předmět: | |
Zdroj: | Scientific Reports, Vol 11, Iss 1, Pp 1-1 (2021) |
Druh dokumentu: | article |
ISSN: | 2045-2322 |
DOI: | 10.1038/s41598-021-02854-3 |
Databáze: | Directory of Open Access Journals |
Externí odkaz: |