Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Autor: Walid Amir, Ju‑Won Shin, Ki‑Yong Shin, Jae‑Moo Kim, Chu‑Young Cho, Kyung‑Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae‑Woo Kim
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Scientific Reports, Vol 11, Iss 1, Pp 1-1 (2021)
Druh dokumentu: article
ISSN: 2045-2322
DOI: 10.1038/s41598-021-02854-3
Databáze: Directory of Open Access Journals