| Autor: |
Yasumin Mingmuang, Narong Chanlek, Prasit Thongbai |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Journal of Materiomics, Vol 8, Iss 6, Pp 1269-1277 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2352-8478 |
| DOI: |
10.1016/j.jmat.2022.04.008 |
| Popis: |
The excellent giant dielectric properties (ExGDPs) are represented in the isovalent–Zr4+/pentavalent–Ta5+ ions co–doped TiO2 with different co–doping percentages (x%ZrTTO). The dopants were dispersed homogeneously in a highly compact–grained ZrTTO microstructure. The mean grain size and cell parameters with bond lengths slightly enlarged as x% increased. The (1%–5%) ZrTTO oxides exhibited ultra–low tanδ values of 0.004–0.016 with the giant dielectric permittivity (ε′∼2.7–3.7 × 104); while the ε′ of the 5%ZrTTO was slightly dependent on the temperature ranging from −60 to 200 °C, following the temperature dependence requirement for application in the X7/8/9R capacitors. Impedance spectroscopy showed a very large resistance of the grain boundaries. The dielectric properties of the 1%ZrTTO were strongly dependent on the applied DC electric field, indicating the dominant internal barrier layer capacitor (IBLC) effect. However, the dielectric properties of the 5%ZrTTO were nearly independent on the applied DC electric field up to 30 V/mm, which was primarily resulted from electron localization in defect dipoles. Therefore, the ExGDPs of the x%ZrTTO were attributed to the combined effects of the IBLC and localized–electron defect–dipoles related to oxygen vacancies (Ti4+⋅e−−VO••−e−⋅Ti4+ and 3Ti4+⋅e−−VO••−TaTi•) and Ti4+⋅e−−TaTi•. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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