| Autor: |
Tewodros Adaro Gatissa, Teshome Senbeta Debela, Belayneh Mesfin Ali |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 13, Iss 7, Pp 075215-075215-11 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0145361 |
| Popis: |
We report the theoretical results of improved solar cell efficiency form InAs quantum dots (QDs) embedded in the intrinsic region of n-i-p GaAs structure. The effect of QD layers on the QD solar cell parameters is explained in detail. For QD layers of 250, we obtained a maximum efficiency of 27.4%. Increasing the number of layers beyond the optimum value resulted in the decrease of efficiency. The presence of InAs QD layers in the cell structure results in a significant rise of the short circuit current density from 33.4 mA/cm2 without InAs QD to 45.4 mA/cm2 in the presence of InAs QD. At the same time, the efficiency of the cell increased from 20.5% without InAs QD to 27.4% with InAs QD. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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