Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED
| Autor: | Benedikovic Daniel, Virot Leopold, Aubin Guy, Hartmann Jean-Michel, Amar Farah, Le Roux Xavier, Alonso-Ramos Carlos, Dado Milan, Cassan Eric, Marris-Morini Delphine, Fedeli Jean-Marc, Boeuf Frederic, Szelag Bertrand, Vivien Laurent |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | EPJ Web of Conferences, Vol 255, p 01002 (2021) |
| Druh dokumentu: | article |
| ISSN: | 2100-014X 20212550 |
| DOI: | 10.1051/epjconf/202125501002 |
| Popis: | Optical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from communication and computation to sensing, biomedicine and health monitoring, to name a few. However, chip integration of optical photodetectors with improved performances is an on-going challenge for mainstream optical communications at near-infrared wavelengths. Here, we present recent advances in heterostructured silicon-germanium-silicon p-i-n photodetectors, enabling high-speed detection on a foundry-compatible monolithic platform. |
| Databáze: | Directory of Open Access Journals |
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