Effects of Novel Material Field Effect Transistor for Heterogeneous Energy and Traffic-Aware Secure Applications

Autor: C. Ambika Bhuvaneswari, E. D. Kanmani Ruby, A. Manjunathan, R. Balamurugan, P. Jenopaul, Belachew Zegale Tizazu
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Advances in Materials Science and Engineering, Vol 2021 (2021)
Druh dokumentu: article
ISSN: 1687-8434
1687-8442
DOI: 10.1155/2021/9085854
Popis: The advent of the automated technological revolution has enabled the Internet of Things to rejuvenate, revolutionize, and redeem the services of sensors. The recent development of microsensor devices is distributed in a real-world terrestrial environment to sense various environmental changes. The energy consumption of the remotely deployed microsystems depends on its utilization efficiency. Improper utilization of sensor nodes’ heterogeneity could lead to uneven energy consumption and load imbalance across the network, which will degrade the performance of the network. The proposed heterogeneous energy and traffic aware (HETA) considers the key parameters such as delay, throughput, traffic load, energy consumption, and life span. The residual energy and a minimum distance between the base station and cluster members are taken into consideration for the cluster head selection. The probability of hitting data traffic has been utilized to analyse energy and traffic towards the base station. The role of the sensor node has been realized and priority-based data forwarding are also proposed. As a result, the heterogeneous energy and traffic aware perform well in balancing traffic towards the base station, which is analysed in terms of maximum throughput and increase in a lifetime of heterogeneous energy networks more than 5000 rounds, and the algorithm outperforms 34.5% of nodes are alive with transmissible energy. The proposed research also endorses unequal clustering and minimum energy consumption. We have modeled our proposed research using various p-type junctionless nanowire FET without doping injunctions. The materials used in this analysis were silicon (Si), germanium (Ge), indium phosphide (InP), gallium arsenide (GaAs), and Al(x)Ga(1−x)As. The dimensions of the p-type cylindrical nanowire channel were 25 nm long and 10 nm in diameter.
Databáze: Directory of Open Access Journals
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