| Autor: |
Cun-Bo Liu, Ruo-Yin Liao, Hsuan-Han Chen, Zhi-Wei Zheng, Kuan-Hung Su, I-Cheng Lin, Ting-An Liang, Ping-Yu Lin, Chen-Hao Wen, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Ching-Chien Huang |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Materials Research Express, Vol 11, Iss 4, p 046404 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2053-1591 |
| DOI: |
10.1088/2053-1591/ad4005 |
| Popis: |
In this work, we adopt a low-temperature sustainable plasma treatment approach for the fabrication of ferroelectric memory devices. From our experimental results, we found that the ferroelectric polarization characteristics of HfAlO _x ferroelectric device could be further improved by using low-temperature nitrogen plasma treatment on bottom TiN electrode for surface modification. The low-temperature nitrogen plasma treatment on TiN bottom electrode not only prevent electrode oxidation, but also lowers the generation of defect traps at the interface between ferroelectric HfAlO _x and TiN bottom electrode during high-temperature ferroelectric annealing process. Besides, the nitrogen-treated bottom electrode also can improve bias-stress induced instability and cycling endurance of HfAlO _x ferroelectric devices due to the effective suppression of randomly distributed defect traps or oxygen vacancies near the surface of bottom electrode. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
