Autor: |
Shin-ichiro Sato, Shuo Li, Andrew D. Greentree, Manato Deki, Tomoaki Nishimura, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Brant C. Gibson, Takeshi Ohshima |
Jazyk: |
angličtina |
Rok vydání: |
2022 |
Předmět: |
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Zdroj: |
Scientific Reports, Vol 12, Iss 1, Pp 1-11 (2022) |
Druh dokumentu: |
article |
ISSN: |
2045-2322 |
DOI: |
10.1038/s41598-022-25522-6 |
Popis: |
Abstract Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications. We manufactured praseodymium (Pr)-doped GaN nanopillars of varying size, and showed significantly enhanced room-temperature photon extraction efficiency compared to unstructured Pr-doped GaN. Implanted Pr ions in GaN show two main emission peaks at 650.3 nm and 651.8 nm which are attributed to 3 P 0-3 F 2 transition in the 4f-shell. The maximum observed enhancement ratio was 23.5 for 200 nm diameter circular pillars, which can be divided into the emitted photon extraction enhancement by a factor of 4.5 and the photon collection enhancement by a factor of 5.2. The enhancement mechanism is explained by the eigenmode resonance inside the nanopillar. Our study provides a pathway for Lanthanoid-doped GaN nano/micro-scale photon emitters and quantum technology applications. |
Databáze: |
Directory of Open Access Journals |
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