Sequential Processes to Produce N-TiO2 Films Through Rf Plasmas

Autor: Valencia-Alvarado R, de la Piedad-Beneitez A, López-Callejas R, Rodríguez-Méndez B G, Mercado-Cabrera A, Peña-Eguiluz R, Muñoz-Castro A E, de la Rosa-Vázquez J M
Jazyk: English<br />French
Rok vydání: 2016
Předmět:
Zdroj: MATEC Web of Conferences, Vol 67, p 06075 (2016)
Druh dokumentu: article
ISSN: 2261-236X
DOI: 10.1051/matecconf/20166706075
Popis: Using as target a CpTi disk in an atmosphere of argon/oxygen and by rf plasma. First titanium dioxide (TiO2) films were obtained on silicon substrates, and subsequently, these films were doped with nitrogen (N-TiO2). In both processes, along four hours at 390°C of temperature. X-Ray diffraction and Raman spectroscopy confirmed the presence of the nanostructured anatase phase. X-ray photoelectron spectroscopy analyzes indicate that the nitrogen atoms were incorporated into the TiO2 film with ~33.9 at%. The films reach a thickness of 1.25 μm and 40 nm the average uniformity determined by using an atomic force microscope. Finally, UV-Vis diffuse reflectance spectroscopy outcome evaluated ones an energy band gap reduction from 3.17 eV to 2.95 eV corresponding to TiO2 films and N-TiO2 films respectively.
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