Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction

Autor: Weifan Cai, Jingyuan Wang, Yongmin He, Sheng Liu, Qihua Xiong, Zheng Liu, Qing Zhang
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Nano-Micro Letters, Vol 13, Iss 1, Pp 1-11 (2021)
Druh dokumentu: article
ISSN: 2311-6706
2150-5551
DOI: 10.1007/s40820-020-00584-1
Popis: Abstract Semiconducting piezoelectric α-In2Se3 and 3R MoS2 have attracted tremendous attention due to their unique electronic properties. Artificial van der Waals (vdWs) heterostructures constructed with α-In2Se3 and 3R MoS2 flakes have shown promising applications in optoelectronics and photocatalysis. Here, we present the first flexible α-In2Se3/3R MoS2 vdWs p-n heterojunction devices for photodetection from the visible to near infrared region. These heterojunction devices exhibit an ultrahigh photoresponsivity of 2.9 × 103 A W−1 and a substantial specific detectivity of 6.2 × 1010 Jones under a compressive strain of − 0.26%. The photocurrent can be increased by 64% under a tensile strain of + 0.35%, due to the heterojunction energy band modulation by piezoelectric polarization charges at the heterojunction interface. This work demonstrates a feasible approach to enhancement of α-In2Se3/3R MoS2 photoelectric response through an appropriate mechanical stimulus.
Databáze: Directory of Open Access Journals
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