| Autor: |
Chucheva G. V., Zhdan A. G., Gulyaev Yu. V. |
| Jazyk: |
English<br />Russian |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3, Pp 3-5 (2011) |
| Druh dokumentu: |
article |
| ISSN: |
2225-5818 |
| Popis: |
A new approach to the creation of a long-term random-access memory based on the effect of the electron-ion interaction on Si-MOS-transistors is proposed. The difference in levels of signals «zero» and «unit» depends on the regime of reading, and can vary widely. Time of recording-erasing is determined by the size of the transistor and makes some milliseconds. Obtained results allow to suggest, that compared with the traditional flash memory, such storage device will be more reliable and durable. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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