| Autor: |
Cristina de Freitas Bueno, Diego Henrique de Oliveira Machado, Tatiane de Fátima Pineiz, Luis Vicente de Andrade Scalvi |
| Jazyk: |
angličtina |
| Rok vydání: |
2013 |
| Předmět: |
|
| Zdroj: |
Materials Research, Vol 16, Iss 4, Pp 831-838 (2013) |
| Druh dokumentu: |
article |
| ISSN: |
1516-1439 |
| DOI: |
10.1590/S1516-14392013005000060 |
| Popis: |
Rare-earth doped (Eu3+ or Ce3+) thin layers of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with gallium arsenide (GaAs) films, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, because it may combine the emission from the rare-earth-doped transparent oxide, with a high mobility semiconductor. Trivalent rare-earth-doped SnO2 presents very efficient emission in a wide wavelength range, including red (in the case of Eu3+) or blue (Ce3+). The advantage of this structure is the possibility of separation of the rare-earth emission centers, from the electron scattering, leading to an indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films. Monochromatic light excitation shows up the role of the most external layer, which may act as a shield (top GaAs), or an ultraviolet light absorber sink (top RE-doped SnO2). The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels in the semiconductors junction with two-dimensional electron gas (2DEG) behavior, which are evaluated by excitation with distinct monochromatic light sources, where the samples are deposited by varying the order of layer deposition. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
