| Autor: |
Kian Hua Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 11, Iss 4, Pp 045203-045203-5 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0045483 |
| Popis: |
We report on the growth of an InAs0.32Sb0.68 layer on (001) GaAs substrates. The lattice mismatch strain between the InAs0.32Sb0.68 layer and the GaAs substrate was accommodated using a thin 50–100 nm Ga0.35In0.65Sb buffer with interfacial misfit (IMF) dislocations. The epitaxial structures were characterized using transmission electron microscopy and x-ray diffraction analysis. The threading dislocation density in the InAs0.32Sb0.68 layer was reduced successfully to ∼1 × 108 cm−2 using the combination of a Ga0.35In0.65Sb IMF buffer and InSb/Ga0.35In0.65Sb superlattice layers. Compared to GaSb/GaAs and InSb/GaAs interfaces, a significantly higher threading dislocation density (>1011 cm−2) was observed at the Ga0.35In0.65Sb/GaAs interface. Detailed analysis suggests that high threading dislocation density in the Ga0.35In0.65Sb IMF buffer could be due to the non-uniform microscopic distribution of indium and gallium atoms. This work is beneficial to the scientific community in the growth of the InAs0.32Sb0.68 material as it provides a novel approach to prepare a platform for the growth of the InAs0.32Sb0.68 material, which does not have a suitable lattice-matched substrate, on the widely available GaAs substrate. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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