| Autor: |
Michael Basler, Richard Reiner, Stefan Moench, Fouad Benkhelifa, Philipp Doring, Patrick Waltereit, Rudiger Quay, Oliver Ambacher |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
IEEE Access, Vol 9, Pp 163122-163137 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2021.3132667 |
| Popis: |
GaN technology is on the advance for the use in power ICs thanks to space-saving integrated circuit components and the increasing number of integrated devices. This work experimentally investigates a number of key building blocks for GaN power integration. First, an overview of the active and passives devices of the technology is given with focus on area-efficient layouts for power transistors and limitations of on-chip capacitors and inductors with comparison to other IC technologies. Digital and analog basic circuits as part of device libraries are examined and optimized with regard to area-efficiency. The NOT gates have active areas as low as $56.7 ~\mu \text{m}^{2}$ and max. static currents of 0.12 mA with high noise margins. Further digital gates are presented. For the analog circuits, differential amplifiers and voltage reference concepts are presented and compared. Finally, GaN power integration is discussed, and integration levels are defined and described. The GaN technology is compared with other IC technologies, and future challenges and perspectives are shown. GaN power integration based on building blocks aims to exploit the full potential of the lateral GaN technology in order to compete with Si-based IC technologies in the future. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
