| Autor: |
Ya Liang Zheng, Wing Man Tang, Tony Chau, Johnny Kin On Sin, Peter T. Lai |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 9, Pp 951-957 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2021.3116715 |
| Popis: |
A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation. Results show that it has the same breakdown voltage as the SiC high-k (HK) MOSFET with an optimized and practical k value of 30 for its insulation pillar, which results in the highest breakdown voltage (1857 V). The forward voltage (VF) and reverse recovery charge (QRR) of the device are 0.9 V and 3.49 $\mu \text{C}$ /cm2 respectively, much lower than those of the SiC HK MOSFET due to the SBD. Moreover, lower reverse transfer capacitance (CRSS), smaller gate charge (QG), and smaller gate-to-drain charge (QGD) are achieved for the proposed device because of the split-gates, leading to much lower switching power loss when compared with the SiC HK MOSFET. All these results indicate that the SiC HK SG-MOSFET has promising potential in future power electronics applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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