A three-terminal non-volatile ferroelectric switch with an insulator–metal transition channel

Autor: Jaykumar Vaidya, R. S. Surya Kanthi, Shamiul Alam, Nazmul Amin, Ahmedullah Aziz, Nikhil Shukla
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Druh dokumentu: article
ISSN: 2045-2322
DOI: 10.1038/s41598-021-03560-w
Popis: Abstract Ferroelectrics offer a promising material platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET operation entails a fundamental trade-off between the read and the program operations. To overcome this trade-off, we propose in this work, a novel device concept, Mott-FeFET, that aims to replace the Silicon channel of the FeFET with VO2- a material that exhibits an electrically driven insulator–metal phase transition. The Mott-FeFET design, which demonstrates a (ferroelectric) polarization-dependent threshold voltage, enables the read current distinguishability (i.e., the ratio of current sensed when the Mott-FeFET is in state 1 and 0, respectively) to be independent of the program voltage. This enables the device to be programmed at low voltages without affecting the ability to sense/read the state of the device. Our work provides a pathway to realize low-voltage and energy-efficient non-volatile memory solutions.
Databáze: Directory of Open Access Journals
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