Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device
| Autor: | Tsz-Lung Ho, Keda Ding, Nikolay Lyapunov, Chun-Hung Suen, Lok-Wing Wong, Jiong Zhao, Ming Yang, Xiaoyuan Zhou, Ji-Yan Dai |
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| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Nanomaterials, Vol 12, Iss 13, p 2128 (2022) |
| Druh dokumentu: | article |
| ISSN: | 12132128 2079-4991 25922882 |
| DOI: | 10.3390/nano12132128 |
| Popis: | Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO3(STO) heterojunction-based memory devices with silver (Ag) and copper (Cu) top electrodes. The SnSe/STO-based memory devices present bipolar resistive switching (RS) with two orders of magnitude on/off ratio, which is reliable and stable. Moreover, multilevel state switching is achieved in the devices by sweeping voltage with current compliance to SET the device from high resistance state (HRS) to low resistance state (LRS) and RESET from LRS to HRS by voltage pulses without compliance current. With Ag and Cu top electrodes, respectively, eight and six levels of resistance switching were demonstrated in the SnSe/SrTiO3 heterostructures with a Pt bottom electrode. These results suggest that a SnSe/STO heterojunction-based memristor is promising for applications in neuromorphic computing as a synaptic device. |
| Databáze: | Directory of Open Access Journals |
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