| Autor: |
Sibo Wang, Xiuhuan Liu, Han Yu, Xiaohang Liu, Jihong Zhao, Lixin Hou, Yanjun Gao, Zhanguo Chen |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Nanomaterials, Vol 14, Iss 4, p 327 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2079-4991 |
| DOI: |
10.3390/nano14040327 |
| Popis: |
The traditional von Neumann architecture of computers, constrained by the inherent separation of processing and memory units, faces challenges, for instance, memory wall issue. Neuromorphic computing and in-memory computing offer promising paradigms to overcome the limitations of additional data movement and to enhance computational efficiency. In this work, transfer-free flexible memristors based on hexagonal boron nitride films were proposed for analog neuromorphic and digital memcomputing. Analog memristors were prepared; they exhibited synaptic behaviors, including paired-pulse facilitation and long-term potentiation/depression. The resistive switching mechanism of the analog memristors were investigated through transmission electron microscopy. Digital memristors were prepared by altering the electrode materials, and they exhibited reliable device performance, including a large on/off ratio (up to 106), reproducible switching endurance (>100 cycles), non-volatile characteristic (>60 min), and effective operating under bending conditions (>100 times). |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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