| Autor: |
Pociask-Bialy Malgorzata, Izhnin Ihor, Voitsekhovskii Alexander, Nesmelov Sergey, Dzyadukh Stanislav |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
EPJ Web of Conferences, Vol 133, p 02001 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
2100-014X |
| DOI: |
10.1051/epjconf/201713302001 |
| Popis: |
Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and conductance dependencies. The capacitance-voltage characteristics exhibit a low-frequency behavior, which is associated with a decrease in the differential resistance of the space charge region. Especially informative illumination exposure is in the study of deep traps in n-HgCdTe (x=0.21-0.23) without graded-gap layer. Illumination leads to the low-frequency behavior of capacitance-voltage characteristics of MIS structures based on p-HgCdTe with HgTe single quantum well in the active region, and maximums in the voltage dependences do not appear. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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