| Autor: |
Hao Ji, Yehui Wei, Xinlei Zhang, Ran Jiang |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 6, Pp 121-125 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2017.2785304 |
| Popis: |
Metal/ferroelectric-Si:HfO2/SiN/SiO2/Si structure was fabricated to investigate the charge trapping properties. This device enhances the carrier injection into the nitride from the silicon due to the spontaneous polarization in SiO2:HfO2 layer. Compared with conventional metal/SiO2/SiN/SiO2/Si devices, the proposed devices showed a larger memory window, faster program/erase speeds, and higher endurance with comparable retention properties. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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