SiO2 Passivation Layer Grown by Liquid Phase Deposition for N-type Bifacial Silicon Solar Cells
| Autor: | Chen Y. L., Lu G. L., Zhong S. H., Shen W. Z. |
|---|---|
| Jazyk: | English<br />French |
| Rok vydání: | 2016 |
| Předmět: | |
| Zdroj: | MATEC Web of Conferences, Vol 67, p 04008 (2016) |
| Druh dokumentu: | article |
| ISSN: | 2261-236X 73476196 |
| DOI: | 10.1051/matecconf/20166704008 |
| Popis: | In this study, we fabricated n-type bifacial solar cells by liquid phase deposited (LPD) SiO2 films as surface passivation layers. We have found that the growth conditions of LPD SiO2 films have great influence on the deposition rate of the LPD SiO2 films. Besides, the surface passivation effects of LPD SiO2 films on both p-type and n-type silicon wafers are enormously improved after annealing at a temperature higher than 700 °C. Finally, the optimized LPD SiO2 films have been successfully applied to the n-type bifacial silicon solar cells as the surface passivation layers, achieving a conversion efficiency of 19.06% on a large size (156 mm×156 mm) solar cell. |
| Databáze: | Directory of Open Access Journals |
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