Semiconductor-less vertical transistor with I ON/I OFF of 106

Autor: Jun-Ho Lee, Dong Hoon Shin, Heejun Yang, Nae Bong Jeong, Do-Hyun Park, Kenji Watanabe, Takashi Taniguchi, Eunah Kim, Sang Wook Lee, Sung Ho Jhang, Bae Ho Park, Young Kuk, Hyun-Jong Chung
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Druh dokumentu: article
ISSN: 2041-1723
DOI: 10.1038/s41467-021-21138-y
Popis: In field-effect transistors, a semiconducting channel is indispensable for device switching. Here, the authors demonstrate semiconductor-less switching via modulation of the field emission barrier height across a graphene-hBN interface with ON/OFF ratio of 106.
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