| Autor: |
Leonid Chernyak, Seth Lovo, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Alfons Schulte, Arie Ruzin, Ulyana Shimanovich |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 14, Iss 11, Pp 115301-115301-5 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0238027 |
| Popis: |
Minority carrier diffusion length in undoped p-type gallium oxide was measured at various temperatures as a function of electron beam charge injection by electron beam-induced current technique in situ using a scanning electron microscope. The results demonstrate that charge injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) on metastable native defect levels in the material, which in turn blocks recombination through these levels. While previous studies of the same material were focused on probing a non-equilibrium carrier recombination by purely optical means (cathodoluminescence), in this work, the impact of charge injection on minority carrier diffusion was investigated. The activation energy of ∼0.072 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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