Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes

Autor:	Siyu Cao, Yue Zhao, Shuai Feng, Yuhua Zuo, Lichun Zhang, Buwen Cheng, Chuanbo Li
Jazyk:	angličtina
Rok vydání:	2019
Předmět:	Single-photon avalanche photodiodes Theoretical analysis Simulation Tunneling effect Materials of engineering and construction. Mechanics of materials TA401-492
Zdroj:	Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Druh dokumentu:	article
ISSN:	1931-7573 1556-276X
DOI:	10.1186/s11671-018-2827-4
Popis:	Abstract Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of InGaAs/InAlAs APDs and SPADs are studied. When the InGaAs/InAlAs SPADs are operated under the Geiger mode, the electric field increases linearly in the absorption layer and deviate down from its linear relations in the multiplication layer. Considering the tunneling threshold electric field in multiplication layer, the thickness of the multiplication layer should be larger than 300 nm. Moreover, SPADs can work under a large bias voltage to avoid tunneling in absorption layer with high doping concentrations in the charge layer.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/c9919ed76d6e4bce982980774c7706e4 Zobrazit plný text záznamu Full text from SpringerLink View record in DOAJ