Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations
| Autor: | Hima Bindu Valiveti, Indr Jeet Rajput, N. Udaya Kumar, Harsh Lohiya, R. Sri Uma Suseela, Atul Singla, Saurabh Rajvanshi |
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| Jazyk: | angličtina |
| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | Cogent Engineering, Vol 11, Iss 1 (2024) |
| Druh dokumentu: | article |
| ISSN: | 23311916 2331-1916 |
| DOI: | 10.1080/23311916.2024.2406381 |
| Popis: | When developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm). These nm-sized channels with shorter lengths tend to increase operational speed of the devices. Leakages are a significant adverse consequence of transistor miniaturization which is addressed in the ongoing study. The design of 10 nm NanoSheet FinFET (NS-FinFET) using Gate All Around (GAA) technology with Silicon On Insulator (SOI) is structured using a Visual Technology Computer-Aided Design (Visual TCAD) simulator. The work emphasizes on uniformly doped multi-channel SOI NS-FinFET with varying Doping Concentrations ranging between 1 × 1016 and 1 × 1018. The different space regions include those with single dielectric materials, such as (Air, SiO2 and HfO2), and dual dielectric materials, such as (HfO2 + SiO2). The effects of GAA nm-technology NS-FinFET devices are comprehensively examined for parameters including (VGS-ID) transfer characteristics, Threshold Voltage (Vth), Ion/Ioff ratio and Subthreshold Swing (SS) by varying doping concentrations and space materials. |
| Databáze: | Directory of Open Access Journals |
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